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Kyoto Semiconductor develops high-speed photodiode with 400Gbps transmission speed


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Kyoto Semiconductor has developed a high-speed photodiode KP-H KPDEH12L-CC1C to support 400Gbps transmission systems that use PAM4 (Pulse Amplitude Modulation 4) inside and between data centers. With the introduction of this InGaAs photodiode, the company is continually supporting the increasing speeds and capacity requirements for transmission systems in 5G networks and beyond. Mass production will start in November, 2020. KP-H KPDEH12L-CC1C main features High-speed – The size of the carrier on which the PD is … More

The post Kyoto Semiconductor develops high-speed photodiode with 400Gbps transmission speed appeared first on Help Net Security.

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